PMZ760SN,315

PMZ760SN,315 datasheet

Маркировка

PMZ760SN,315
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMZ760SN,315 Configuration: Single Continuous Drain Current: 1.22 A Current - Continuous Drain (id) @ 25?° C: 1.22A Drain To Source Voltage (vdss): 60V Drain-source Breakdown Voltage: 60 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 1.05nC @ 10V Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 23pF @ 30V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Power - Max: 2.5W Power Dissipation: 2.5 W Rds On (max) @ Id, Vgs: 900 mOhm @ 300mA, 10V Resistance Drain-source Rds (on): 0.9 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 60 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.9 Ohms Fall Time: 2.2 ns Rise Time: 4 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 5 ns Part # Aliases: PMZ760SN T/R Other Names: 934057744315, PMZ760SN T/R
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